ZEP7000 |
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ZEP 7000 is a positive tone electron beam resist for high resolution with excellent dry-etching resistance.
Features |
Extremely high resolution |
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Excellent dry-etching resistance, as high as photo resists |
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Accelerated drawing machines |
Lineup| Resist | Solvent | Viscosity (mPa•s) |
Thinner |
| ZEP7000 | Diglyme | 17, 22 | ZEP-D |
| Developer | Dry etching process |
Wet etching process |
Puddle |
Spray development |
| ZED-500 |  |
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| ZED-750 | |
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| Rinse | ZMD-D | Stripper | ZDMAC |
| Process Conditions | ||||||
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Substrate : |
4inch Si Wafer |
DEV.: |
ZED-500, 23C°,
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180 sec | ||
| Film thickness : | 5000°C | ZED-750, 23C°, | 180 sec | |||
| Bake : | 180°C, 180 sec (Hot plate) | |||||
| EXP : | ELS-3300, 20 keV | |||||
Dry etching rate
| CF4 Dry
Etching Condition 0.15 torr, 70?qcm, 200W |
Cl2+O2
Dry Etching Condition Cl2/O2=4/1,5 min |
Pattern profile after dry etchinge ICP |
Pattern profile after dry etchinge |
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| 0.5µm | 0.4µ枸 | 0.3µm | 0.3µ枸 |
Linearity
| Process Conditions | |
| FilmaThichness : | 400Å |
| Exposure : | 50 keV |
| Pattern : | isolated hole |
| Development : | ZED-500 |
| Rince : | ZMD-D |
| Dry Etcher : | ICP |
