Products

ZEORORA® ZFL-58(C5F8) for SiO2 EtchingPrint Page

Applications

  • Semiconductors (Memory/LSI)
  • Etching silicon oxide film

Characteristics

  • Wide process margin
  • High etch rate and selectivity
  • Zero ozone depletion potential
  • Well balanced atmospheric lifetime and minimal global warming potential

Comparison of gas chemistry (C4F8 vs. C5F8)

  • fig1

Comparison of contact profile using three kinds of gases after etching

  • fig2

Physical Properties

  ZEORORA® ZFL-58(C5F8)
Boiling Point (℃) 27
Density (kg/m3) 1580
Viscosity (Pa・s) 0.0038
Surface Tention (mN/m) 17.8
Specific Heat (J/(kg・K)) 1160
Latent Heat of Vaporization (kJ/kg) 118
Critical Temperature(℃) 159.9
Critical Pressure (MPa) 2.47
Flash Point (℃) No flash point
Explosive Propeties Non-explosive
Flammability Non-Flammable
Solubility for Water (g/100g water) 0.00756
Solubility of Water(g/100g solvent) 0.0072
Atmospheric Lifetime (year) 0.98
ODP (CFC-11=1) 0
GWP (CO2=1 100 years) 90
  • ZEORORA® was developed in partnership with the National Institute of Materials and Chemical Research in a joint research project.

▶ High Selective and Low Damage SiN Etching (R&D Sample) ※

▶ High Selective SiO2 and Low-K Etching (R&D Sample) ※

※ For more information, please feel free to cantact us directly.

mailContact Us about Imaging & Electronics Materials
  • Product or Business Inquiries
  • Contact Form
  • Electronic Material Business Promotion Dept.
    Tel:+81-3-3216-0590
  • Technical Inquiries
  • Contact Form
  • Electronic Material Business Promotion Dept.
    Tel:+81-3-3216-0590